Type 2N3866A
Geometry
1007
Polarity NPN
Qual Level: JAN - JANS
Data Sheet No. 2N3866A
Generic Part Number:
2N3866A
REF: MIL-PRF-19500/398
Features:
General-purpose silicon transistor
for switching and amplifier appli-
cations.
Housed in
TO-39
case.
Also available in chip form using
the
1007
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/398
which
Semicoa meets in all cases.
Rating
Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
30
V
Collector-Base Voltage
V
CBO
60
V
Emitter-Base Voltage
V
EBO
3.5
V
Collector Current, Continuous
I
C
0.4
A
Operating Junction Temperature
T
J
-55 to +175
o
C
Storage Temperature
T
STG
-55 to +175
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
TO-39
Data Sheet No. 2N3866A
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 100 A, pulsed
Collector-Emitter Breakdown Voltage
I
C
= 5 mA, pulsed
Collector-Emitter Breakdown Voltage
I
C
= 40 mA, V
BE
= -5V, clamped
Emitter-Base Breakdown Voltage
I
E
= 100 A, pulsed
Collector-Emitter Cutoff Current
V
CE
= 55 V
Collector-Emitter Cutoff Current
V
CE
= 55 V, T
A
= +150
o
C
Collector-Emitter Cutoff Current
V
CE
= 28 V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
(BR)CBO
60
---
V
V
(BR)CEO
30
---
V
V
V
(BR)EBO
3.5
---
I
CES
---
100
A
I
CES2
---
2.0
mA
I
CEO
---
20
A
V
(BR)CEC
55
---
---
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 5.0 V (pulsed)
h
FE1
25
200
---
I
C
= 360 mA, V
CE
= 5.0 V (pulsed)
h
FE2
8.0
---
---
I
C
= 50 mA, V
CE
= 5.0 V (pulsed), T
A
= -55
o
C
h
FE3
12
---
---
Collector-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 10 mA (pulsed)
V
CE(sat)
---
1.0
V dc
Power Output
V
CC
= 28 V, P
IN
= 0.15 W, f = 400 MHz
P
1out
1.0
2.0
W
Power Output
V
CC
= 28 V, P
IN
= 0.075 W, f = 400 MHz
P
2out
0.5
---
W
Collector Efficiency
V
CC
= 28 V, P
IN
= 0.15 W, f = 400 MHz
n
1
45
---
%
Collector Efficiency
V
CC
= 28 V, P
IN
= 0.075 W, f = 400 MHz
n
2
40
---
%
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter, Small Signal, Short Circuit
Current Transfer Ratio
I
C
= 50 mA, V
CE
= 15 V, f = 200
Open Circuit Output Capacitance
V
CB
= 28 V, I
E
= 0
|h
FE
|
4.0
7.5
---
pF
C
OBO
---
3.5
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